HiPco™ carbon nanotubes are synthesized using high-pressure carbon monoxide process. Unlike other methods in which the metal catalysts are deposited or embedded on the substrate before carbon deposition begins, catalyst is introduced in gas phase in this method. Both the catalyst precursor and the carbon monoxide gas are fed into a furnace, followed by catalytic reaction in the gas phase. This method is highly industrializable and suitable for large-scale synthesis, because the nanotubes are free from catalytic supports and the reaction can be operated continuously. The targeted price will be as cheap as multiwalled CNTs as Atom is currently scaling up the production.
The buckypaper made of HiPco™ was reported to have sheet resistance as low as 0.2-2 Ohms/sq, and was fabricated as electrodes for LCD displays and electrophoretic displays.
HiPco™ is the only CNTs from which single-chirality, single-walled CNT can be extracted by various separation methods. HiPco™ possesses the following advantages over CVD or arc-discharge CNTs:
• Less defects
• Stronger tubes
• More suitable for semiconductor applications.
Atom NanoElectronics Inc. is the exclusively licensed entity to manufacture, distribute and sell HiPco™ materials.
HiPco™ carbon nanotubes are available in kg quantities for research and development.
We also provide purified and functionalized HiPco™ materials.
Please contact us using the form below or email to firstname.lastname@example.org for quotes and further information.
Publications Based on our HiPCOTM tubes
|Individual SWCNT Diameter
|~0.7 – 1.2 nm
|Individual SWCNT Length
|~100 – 5000 nm
|Calculated Molecular Weight
|~3.0x10e5 – 2.6x10e7 Amu
|Dry loose powder of bundled nanotubes
TGA Residue as Fe
|TGA 1st Derivative Peak Temperature
Raw ~350 – 410 °C
Pure ~350 – 410 °C
|TGA Onset Temperature
|Raw ~350 °C
Pure ~440 °C
|Maximum Surface Area
|BET Surface Area
|~400 – 1000 m2/g
|0.2 – 2 Ω
HiPco™ Single-Walled Carbon Nanotubes